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In-memory computing represents an effective method for modeling complex physical systems that are typically challenging for conventional computing architectures but has been hindered by issues such as reading noise and writing variability that restrict scalability, accuracy, and precision in high-performance computations. We propose and demonstrate a circuit architecture and programming protocol that converts the analog computing result to digital at the last step and enables low-precision analog devices to perform high-precision computing. We use a weighted sum of multiple devices to represent one number, in which subsequently programmed devices are used to compensate for preceding programming errors. With a memristor system-on-chip, we experimentally demonstrate high-precision solutions for multiple scientific computing tasks while maintaining a substantial power efficiency advantage over conventional digital approaches. 

Advanced polymers with high energy density and high efficiency are urgently needed in pulse power capacitor applications. Here, we present a practical design approach towards all-organic polymers with high energy density and high efficiency by enhancing dipolar polarization at the molecular level. Flexible segments were introduced into the backbones of rigid polar aromatic polymers to increase the flexibility of dipoles. Dielectric spectroscopy measurements of designed polymers revealed multiple strong sub-glass transition (sub- T g ) relaxation peaks with low activation energies, which indicated the enhanced movement freedom of dipoles below the glass transition temperature. As a result, dielectric constants were increased up to 46% when compared with their base polymers and D – E loop measurements showed that all these designed polymers had high energy densities above 11 J cm −3 with efficiencies above 90%. These results unveiled a novel approach towards high dielectric constant organic polymers for electrical energy storage. 

Abstract The organic insulator–metal interface is the most important junction in flexible electronics. The strong band offset of organic insulators over the Fermi level of electrodes should theoretically impart a sufficient impediment for charge injection known as the Schottky barrier. However, defect formation through Anderson localization due to topological disorder in polymers leads to reduced barriers and hence cumbersome devices. A facile nanocoating comprising hundreds of highly oriented organic/inorganic alternating nanolayers is self‐coassembled on the surface of polymer films to revive the Schottky barrier. Carrier injection over the enhanced barrier is further shunted by anisotropic 2D conduction. This new interface engineering strategy allows a significant elevation of the operating field for organic insulators by 45% and a 7× improvement in discharge efficiency for Kapton at 150 °C. This superior 2D nanocoating thus provides a defect‐tolerant approach for effective reviving of the Schottky barrier, one century after its discovery, broadly applicable for flexible electronics.